聚合物纳米孔隙增透膜制备工艺的研究

论述了聚合物纳米孔隙增透膜的制备工艺流程,分析了聚合物材料分子量、实验环境温度和湿度、溶剂挥发性等条件对纳米孔隙增透膜的影响。研究表明,聚合物材料分子量的增大、温度的降低、湿度的升高以及采用挥发性弱的溶剂都将导致增透膜孔隙尺寸的增大,孔隙越大其对光的散射损耗就会增大,所以增透膜的透过率就越低。通过大量的试验分析得出一组较理想的工艺参量:使用低分子量的聚合物材料(小于15 kg/mol),环境温度大于25℃、环境相对湿度小于30%,在采用低沸点的溶剂如四氢呋喃等措施下可有效降低增透膜散射损耗。     

AN ESTIMATE ON THE DISTRIBUTION AND MOMENTS OF THE LAST EXIT TIME OF AN ELLIPTIC DIFFUSION PROCESS

Let LB be the last exit time from a compact set B of an elliptic diffusion process X. A moderate estimate for the distribution of LB is obtained, and the sufficient and necessary condition for Ex(LBk)<∞is proved.     

氩等离子体物态方程的TF简化模型

对于高温高压下氩等离子体的电离度和物态方程,本文给出了一种基于Thomas-Feimi(TF)统计模型的简化计算新方法:首先将TF模型电离势的数值结果进行函数逼近,给出一个便于数值求解的计算电离度的近似计算方法,并由此计算了局部热动平衡下的氩等离子体在10～1000 eV高温范围内的物态方程.计算结果与国外报道的其他几种理论模型的计算结果均符合很好,与实验值也吻合较好.本文所提出的简单模型也适用于计算混合物物态方程,可以在电磁发射技术领域中的强电离等离子体中有更为广阔的应用前景.     

动态广义球对称含荷黑洞的统计熵

利用改进了的brickwall膜模型,计算了动态广义球对称含荷黑洞的熵,研究结果表明,对于动态黑洞,将黑洞熵表示为与视界面积成正比时,则比例系数总与动态黑洞的视界速度有关 关键词： 广义球对称黑洞 黑洞熵 brick-wall膜模型 WKB近似     

MOCVD生长的GaN单晶膜透射光谱研究

采用MOCVD技术在Al2O3(0001)衬底上生长了GaN薄膜，使用透射光谱、光致发光光谱和X射线双晶衍射三种技术测试了五类GaN薄膜样品，实验结果表明：GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致，即透射率越大，半高宽越小，结晶质量越好；而X射线双晶衍射峰半高宽最小的样品，其PL谱的带边峰却很弱，这说明PL谱反映样品的光学性能与X射线双晶衍射获得的结晶质量不存在简单的对应关系，同时还报导了一种特殊工艺生长的高阻GaN样品的RBS／沟道结果。     

Reaction Mechanism Investigation Using Vibrational Mode Analysis for the Multichannel Reaction of CH_3O+CO

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Synthesis for robust synchronization of chaotic systems under output feedback control with multiple random delays

Synchronization under output feedback control with multiple random time delays is studied, using the paradigm in nonlinear physics—Chua’s circuit. Compared with other synchronization control methods, output feedback control with multiple random delay is superior for a realistic synchronization application to secure communications. Sufficient condition for global stability of delay-dependent synchronization is established based on the LMI technique. Numerical simulations fully support the analytical approach, in spite of the random delays.     

Monte Carlo simulation of grain growth in polycrystalline materials

Understanding the kinetics of grain growth, under the influence of second phase (such as impurities, voids and bubbles) is fundamental to advances in the control of microstructural evolution. As a precursor to this objective, we have investigated the grain growth kinetics in a polycrystalline material using a standard Q-state Potts’ model under Monte Carlo settings. Based on physical reasoning, new modifications are suggested to circumvent some of the disadvantages in the basic Potts model. The efficacy of these modifications vis-à-vis the basic model is verified. The influence of second phase particles on the impurity loaded grain boundaries is investigated for the study of grain growth kinetics.     

Electroless deposition of open-end Cu nanotube arrays

Cu nanotube arrays were fabricated by electroless deposition using porous anodic aluminium oxide membranes as templates. This was accomplished by a four-step procedure, i.e. pore-wall modification, polishing treatment, sensitization-activation and electroless deposition. The as-synthesized Cu nanotubes possess controllable inner diameter and open ends.     

线性流形上矩阵方程BTXB=F的双对称最小二乘解

1引言令R~(n×m)、OR~(n×n)、SR~(n×n)(SR_0~(n×n))分别表示所有n×m阶实矩阵、n阶实正交阵、n阶实对称矩阵(实对称半正定阵)的全体,A~ 表示A的Moore-Penrose广义逆,I_k表示k阶单位矩阵,S_k表示k阶反序单位矩阵。R(A)表示A的列空间,N(A)表示A的零空间,rank(A)表示矩阵A的秩。对A=(a_(ij)),B=(b_(ij))∈R~(n×m),A*B表示A与